APTGT100DH60T3G APTGT100DH60T3G ? rev 0 april, 2009 www.microsemi.com 1 ? 5 23 r1 32 30 cr3 cr1 q4 cr2 cr4 31 29 19 7 22 3 4 18 8 q1 15 16 13 14 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? absolute maximum ratings * specification of igbt device but output current must be limited to 75a to not exceed a delta of temperature greater than 30c for the connectors. these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 150 * i c continuous collector current t c = 80c 100 * i cm pulsed collector current t c = 25c 200 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 340 w rbsoa reverse bias safe operating area t j = 150c 200a @ 550v application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance - symmetrical design ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant asymmetrical - bridge trench + field stop igbt power module v ces = 600v i c = 100a* @ tc = 80c
APTGT100DH60T3G APTGT100DH60T3G ? rev 0 april, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 1.5 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 6100 c oes output capacitance 390 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 190 pf q g gate charge v ge =15v, i c =100a v ce =300v 1.1 c t d(on) turn-on delay time 115 t r rise time 45 t d(off) turn-off delay time 225 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 55 ns t d(on) turn-on delay time 130 t r rise time 50 t d(off) turn-off delay time 300 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 70 ns t j = 25c 0.4 e on turn on energy t j = 150c 0.875 mj t j = 25c 2.5 e off turn off energy v ge = 15v v bus = 300v i c = 100a r g = 3.3 t j = 150c 3.5 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 500 a diode ratings and characteristics (cr2 & cr3) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2 v f diode forward voltage i f = 100a v ge = 0v t j = 150c 1.5 v t j = 25c 125 t rr reverse recovery time t j = 150c 220 ns t j = 25c 4.7 q rr reverse recovery charge t j = 150c 9.9 c t j = 25c 1.1 e r reverse recovery energy i f = 100a v r = 300v di/dt =2000a/s t j = 150c 2.4 mj cr1 & cr4 are igbt protection diodes only
APTGT100DH60T3G APTGT100DH60T3G ? rev 0 april, 2009 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.44 r thjc junction to case thermal resistance diode 0.77 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT100DH60T3G APTGT100DH60T3G ? rev 0 april, 2009 www.microsemi.com 4 ? 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 175 200 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 300v v ge = 15v r g = 3.3 ? t j = 150c eon eon eoff er 0 2 4 6 8 0 5 10 15 20 25 30 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 100a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 0 100 200 300 400 500 600 700 v ce (v) i f (a) v ge =15v t j =150c r g =3.3 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT100DH60T3G APTGT100DH60T3G ? rev 0 april, 2009 www.microsemi.com 5 ? 5 forward characteristic of diode t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =3.3 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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